Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2017-11-27T08:03:36Z | - |
dc.date.available | 2017-11-27T08:03:36Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 603, Page. 268-271 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0040609016001309?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/31889 | - |
dc.description.abstract | The device performance of amorphous In-Zn-O (a-IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a-IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3 cm(2)/Vs, subthreshold gate swing (SS) values of 1.9 V/decade, and I-ON/OFF of similar to 10(6). In contrast, the SS, mobility, and I-ON/OFF ratio of RTP-annealed a-IZO TFTs with Cu/Ta contacts were 30.6 cm(2)/Vs, 0.68 V/decade, and 3 x 10(7), respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a-IZO channel due to the rapid heating associated with RTP annealing. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This study was supported by the industrial strategic technology development program funded by MKE/KEIT under grant 10041808 and the research fund of Hanyang University (HY-2015). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Printed contacts | en_US |
dc.subject | Copper | en_US |
dc.subject | Rapid temperature annealing | en_US |
dc.subject | Indium-zinc-oxide | en_US |
dc.subject | Semiconductor | en_US |
dc.subject | Tantalum | en_US |
dc.subject | Diffusion barrier | en_US |
dc.subject | Thin-film transistors | en_US |
dc.title | Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing | en_US |
dc.type | Article | en_US |
dc.relation.volume | 603 | - |
dc.identifier.doi | 10.1016/j.tsf.2016.02.032 | - |
dc.relation.page | 268-271 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Won, Ju Yeon | - |
dc.contributor.googleauthor | Han, Young Hun | - |
dc.contributor.googleauthor | Seol, Hyun Ju | - |
dc.contributor.googleauthor | Lee, Ki June | - |
dc.contributor.googleauthor | Choi, Rino | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2016003143 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
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