Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 소홍윤 | - |
dc.date.accessioned | 2017-11-13T01:57:47Z | - |
dc.date.available | 2017-11-13T01:57:47Z | - |
dc.date.issued | 2016-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 108, NO 1, Article number 012104 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | http://aip.scitation.org/doi/10.1063/1.4939509 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/30643 | - |
dc.description.abstract | In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 degrees C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area. (C) 2016 AIP Publishing LLC. | en_US |
dc.description.sponsorship | This work was supported in part by the Stanford Woods Institute for the Environment and Stanford Energy 3.0 (formerly the Energy and Environment Affiliates Program). The authors would like to thank Dr. Xiaoqing Xu for MOCVD growth process and insightful discussions. The authors are also grateful for support from Stanford Nanofabrication Facility where all devices were fabricated. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | MOLECULAR-BEAM EPITAXY | en_US |
dc.subject | PIEZOELECTRIC POLARIZATION | en_US |
dc.subject | ALN INTERLAYERS | en_US |
dc.subject | POWER-DENSITY | en_US |
dc.subject | HEMTS | en_US |
dc.subject | HETEROSTRUCTURES | en_US |
dc.subject | SILICON | en_US |
dc.subject | SI(111) | en_US |
dc.subject | GAN | en_US |
dc.subject | SI | en_US |
dc.title | Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4939509 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | So, Hongyun | - |
dc.contributor.googleauthor | Senesky, Debbie G. | - |
dc.relation.code | 2016003157 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | hyso | - |
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