Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2017-09-14T02:25:32Z | - |
dc.date.available | 2017-09-14T02:25:32Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 147, Page. 239-243 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0167931715002713?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/29138 | - |
dc.description.abstract | Hydrogen (H-2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (D-it) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H-2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), D-it value more than 10(14) eV(-1) cm(-2) is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, D-it of the H-2 plasma treated device is significantly reduced to as low as 1.00 x 10(12) eV(-1) cm(-2) at E-c - E-t = 0.4 eV and is about five times lower than that of sample without H-2 plasma passivation (D-it = 4.84 x 10(12) eV(-1) cm(-2)). (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0024043) and the Future Semiconductor Device Technology Development Program (10044842) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Plasma hydrogen passivation | en_US |
dc.subject | SiC | en_US |
dc.subject | Power device | en_US |
dc.subject | ALD Al2O3 | en_US |
dc.title | Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing | en_US |
dc.type | Article | en_US |
dc.relation.volume | 147 | - |
dc.identifier.doi | 10.1016/j.mee.2015.04.059 | - |
dc.relation.page | 239-243 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Heo, Seung Chan | - |
dc.contributor.googleauthor | Lim, Donghwan | - |
dc.contributor.googleauthor | Jung, Woo Suk | - |
dc.contributor.googleauthor | Choi, Rino | - |
dc.contributor.googleauthor | Yu, Hyun-Yong | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2015001922 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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