Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2017-09-13T08:14:50Z | - |
dc.date.available | 2017-09-13T08:14:50Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 147, Page. 210-214 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0167931715002932?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/29122 | - |
dc.description.abstract | The effects of ammonium poly-sulfide, (NH4)(2)S-x, treatment on the surface of GaN metal oxide semiconductor (MOS) device with nano-laminated atomic layer deposition (ALD) HfAlOx gate dielectric and Ru gate electrode were investigated and compared with HCl pre-treatment. Compared with sample without sulfur (S) passivation, S-passivated sample shows improved surface roughness, increased capacitance, higher breakdown voltage, smaller frequency dependence, lower interface state density (D-it). It is found that (NH4)(2)S-x can remove native oxide and passivate the surface and interface states. Surface oxidation is suppressed due to higher strength in the N-S bonds than that of the N-O bonds. Further improvement is observed with increasing (NH4)(2)S-x treatment time. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0024043) and the Future Semiconductor Device Technology Development Program (10044842) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Ammonium polysulfide | en_US |
dc.subject | Interface trap density | en_US |
dc.subject | Passivation | en_US |
dc.subject | GaN device | en_US |
dc.title | The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack | en_US |
dc.type | Article | en_US |
dc.relation.volume | 147 | - |
dc.identifier.doi | 10.1016/j.mee.2015.04.068 | - |
dc.relation.page | 210-214 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Lim, Donghwan | - |
dc.contributor.googleauthor | Jung, Woo Suk | - |
dc.contributor.googleauthor | Choi, Moon Suk | - |
dc.contributor.googleauthor | Gil, Youngin | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2015001922 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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