Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 성명모 | - |
dc.date.accessioned | 2017-09-04T02:16:26Z | - |
dc.date.available | 2017-09-04T02:16:26Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | NANOSCALE, v. 7, NO 42, Page. 17702-17709 | en_US |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR05392G#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28853 | - |
dc.description.abstract | Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity. | en_US |
dc.description.sponsorship | This work was supported by the Global Frontier R&D Program on the Center for Multiscale Energy System (No. 2011-0031562) and the Nano Material Technology Development Program (2012M3A7B4034985) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MIST) (No. 2014R1A2A1A10050257). S.I. acknowledges the financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815). H.J.C. acknowledges the support from NRF of Korea (Grant No. 2011-0018306) and KISTI super-computing centre (Project No. KSC-2013-C3-062). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | en_US |
dc.subject | POLYCRYSTALLINE GRAPHENE | en_US |
dc.subject | GRAIN-BOUNDARIES | en_US |
dc.subject | FILMS | en_US |
dc.subject | ELECTRODES | en_US |
dc.subject | TRANSPORT | en_US |
dc.subject | PROSPECTS | en_US |
dc.subject | GROWTH | en_US |
dc.title | Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO | en_US |
dc.type | Article | en_US |
dc.relation.no | 42 | - |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1039/c5nr05392g | - |
dc.relation.page | 17702-17709 | - |
dc.relation.journal | NANOSCALE | - |
dc.contributor.googleauthor | Park, Kyung Sun | - |
dc.contributor.googleauthor | Kim, Sejoon | - |
dc.contributor.googleauthor | Kim, Hongbum | - |
dc.contributor.googleauthor | Kwon, Deokhyeon | - |
dc.contributor.googleauthor | Lee, Yong-Eun Koo | - |
dc.contributor.googleauthor | Min, Sung-Wook | - |
dc.contributor.googleauthor | Im, Seongil | - |
dc.contributor.googleauthor | Choi, Hyoung Joon | - |
dc.contributor.googleauthor | Lim, Seulky | - |
dc.contributor.googleauthor | Sung, Myung Mo | - |
dc.relation.code | 2015000055 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | smm | - |
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