Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2017-08-22T07:24:23Z | - |
dc.date.available | 2017-08-22T07:24:23Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 33, NO 6, Page. 1-4 | en_US |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://avs.scitation.org/doi/10.1116/1.4936121 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28706 | - |
dc.description.abstract | An extreme ultraviolet lithography (EUVL) suffers from the trade-off relationship among resolution, line edge roughness, and sensitivity, which is a natural limitation for chemically amplified resists. Thus, the performance of photoresist needs to be assisted by the other materials, and the resist underlayer is one of them. Using a lithography simulation tool, the authors show that the standing wave effect can also occur in the EUVL process and is dependent on the pattern pitch ratio. Although underlayers with a lower refractive index exhibit reduced in-plane line edge roughness, the difference between the refractive index of the underlayer and photoresist should be maintained below 5% in order to optimize performance. (C) 2015 American Vacuum Society. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program, through the National Research Foundation of Korea (NRF), funded by the Korean government (MSIP) (Grant No. 2011-0028570). The authors wish to convey their appreciation to KLA-Tencor for providing the PROLITH (TM) software. | en_US |
dc.language.iso | en | en_US |
dc.publisher | A V S AMER INST PHYSICS | en_US |
dc.subject | EUV | en_US |
dc.subject | LITHOGRAPHY | en_US |
dc.subject | MODEL | en_US |
dc.title | Effect of extreme ultraviolet photoresist underlayer optical properties on imaging performance | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 33 | - |
dc.identifier.doi | 10.1116/1.4936121 | - |
dc.relation.page | 1-4 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.contributor.googleauthor | Kim, Jung Sik | - |
dc.contributor.googleauthor | Cho, Han Ku | - |
dc.contributor.googleauthor | Hong, Seongchul | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2015001474 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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