Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2017-06-08T02:27:49Z | - |
dc.date.available | 2017-06-08T02:27:49Z | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, no. 10, Page. 7586-7589 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00033 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/27684 | - |
dc.description.abstract | Resistive switching characteristics of insulating Y2O3 films grown by an atomic layer deposition technique have been investigated with their growth temperature range of 250 degrees C to 350 degrees C. Ru/Y2O3/Ru resistors reveal the bi-stable unipolar resistive switching behaviors. Resistive switching behaviors are related to the chemical bonding states of Y2O3 insulating films. As the insulating film growth temperature increases, Y2O3 film becomes much stoichiometric and little contaminated with impurities. Moreover, the resistance ratio high resistance state to low resistance state increases at growth temperature over 300 degrees C. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program (2009-0083540, 2012R1A6A1029029) and Nano Material Technology Development Program (2012M3A7B4034985) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and by the Ministry of Science, ICT and Future Planning. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Resistive Switching | en_US |
dc.subject | Yttrium Oxide | en_US |
dc.subject | Atomic Layer Deposition | en_US |
dc.title | Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature | en_US |
dc.type | Article | en_US |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1166/jnn.2015.11163 | - |
dc.relation.page | 7586-7589 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Seong, Sejong | - |
dc.contributor.googleauthor | Lee, Taehoon | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2015003357 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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