Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)MATERIALS SCIENCE AND ENGINEERING(신소재공학부)Articles

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dc.contributor.author안진호-
dc.date.accessioned2017-06-08T02:27:49Z-
dc.date.available2017-06-08T02:27:49Z-
dc.date.issued2015-09-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, no. 10, Page. 7586-7589en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00033-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27684-
dc.description.abstractResistive switching characteristics of insulating Y2O3 films grown by an atomic layer deposition technique have been investigated with their growth temperature range of 250 degrees C to 350 degrees C. Ru/Y2O3/Ru resistors reveal the bi-stable unipolar resistive switching behaviors. Resistive switching behaviors are related to the chemical bonding states of Y2O3 insulating films. As the insulating film growth temperature increases, Y2O3 film becomes much stoichiometric and little contaminated with impurities. Moreover, the resistance ratio high resistance state to low resistance state increases at growth temperature over 300 degrees C.en_US
dc.description.sponsorshipThis work was supported by Basic Science Research Program (2009-0083540, 2012R1A6A1029029) and Nano Material Technology Development Program (2012M3A7B4034985) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and by the Ministry of Science, ICT and Future Planning.en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectResistive Switchingen_US
dc.subjectYttrium Oxideen_US
dc.subjectAtomic Layer Depositionen_US
dc.titleResistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperatureen_US
dc.typeArticleen_US
dc.relation.volume15-
dc.identifier.doi10.1166/jnn.2015.11163-
dc.relation.page7586-7589-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorJung, Yong Chan-
dc.contributor.googleauthorSeong, Sejong-
dc.contributor.googleauthorLee, Taehoon-
dc.contributor.googleauthorPark, In-Sung-
dc.contributor.googleauthorAhn, Jinho-
dc.relation.code2015003357-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-
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