Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2017-06-07T07:15:03Z | - |
dc.date.available | 2017-06-07T07:15:03Z | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 33, NO 5, Page. 1204-1204 | en_US |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://avs.scitation.org/doi/abs/10.1116/1.4927368 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/27652 | - |
dc.description.abstract | The fabricated Au/Ti/TaOx/TiN devices demonstrate nonlinear behavior at a low resistance state and a complementary resistive switching (CRS) behavior that is dependent upon the thickness of the Ti insertion layer. The nonlinear behavior can be explained by the presence of an ultrathin TiOx layer that acts as a tunnel barrier. In addition, the CRS behavior can be understood in relation to the redistribution of oxygen vacancies between the Ti/TaOx top interfaces. A thicker Ti insertion layer forms a thicker TiOx layer at the Ti/TaOx interface, which can serve as another switching layer. The Au/Ti/TaOx/TiN devices in this study are fabricated with fully complementary metal-oxide-semiconductor-compatible materials and exhibit nonlinear behavior at a low resistance state and a CRS behavior that present possible solutions for the suppression of the sneak current in the crossbar arrays. (C) 2015 American Vacuum Society. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation (NRF) of Korea grant funded by the Korean Government (No. NRF-2014M3A7B4049367), Republic of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | A V S AMER INST PHYSICS | en_US |
dc.subject | MEMORIES | en_US |
dc.subject | RRAM | en_US |
dc.title | Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 33 | - |
dc.identifier.doi | 10.1116/1.4927368 | - |
dc.relation.page | 1204-1204 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.contributor.googleauthor | Jeon, Heeyoung | - |
dc.contributor.googleauthor | Park, Jingyu | - |
dc.contributor.googleauthor | Kim, Hyunjung | - |
dc.contributor.googleauthor | Kim, Honggi | - |
dc.contributor.googleauthor | Jang, Woochool | - |
dc.contributor.googleauthor | Song, Hyoseok | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.relation.code | 2015001474 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
dc.identifier.researcherID | P-3193-2015 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-2502-7413 | - |
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