Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최덕균 | - |
dc.date.accessioned | 2017-05-23T00:00:01Z | - |
dc.date.available | 2017-05-23T00:00:01Z | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | RSC ADVANCES, v. 5, NO 101, Page. 82947-82951 | en_US |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2015/RA/C5RA16443E#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/27397 | - |
dc.description.abstract | We have developed a new technique to fabricate coplanar homojunction structure a-IGZO thin film transistors (TFTs) by adopting selective ultraviolet (UV) irradiation in the n(+) source/drain regions of an a-IGZO layer through a patterned photoresist mask. In order to apply this technique for coplanar homojunction a-IGZO TFTs, we systematically studied the effect of dual wavelength (185 nm and 254 nm) UV irradiation time on the conductivity of a-IGZO films. Various materials were evaluated to find one that provided proper shielding against UV irradiation. The resistivity of the a-IGZO film drastically decreased from an as-deposited value of 2.71 x 10(6) Omega cm to 3.76 x 10(-5) Omega cm after UV irradiation. The lowest resistivity obtained in this study is similar to that of ITO transparent electrodes and is about 2 orders of magnitude lower than the values obtained to date. Coplanar homojunction a-IGZO TFTs were successfully fabricated by introducing an optimized process that included UV irradiation through a patterned photoresist UV mask. The saturation mobility (mu(sat)), threshold voltage (V-th), sub-threshold swing (SS), and on/off current ratio (I-on/I-off) were measured to be 6.7 cm(2) V-1 s, 7.3 V, 0.21 V per decade, and similar to 10(9), respectively. Moreover, we showed that the UV irradiation technique provided both a low contact resistance due to the high conductivity in the source/drain region and a small channel length modulation due to non-thermal doping behavior. We believe that this UV irradiation process is a useful technique because it is simple and results in outstanding electrical properties. | en_US |
dc.description.sponsorship | This research was supported by Samsung Display CO., LTD. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | OXIDE SEMICONDUCTOR | en_US |
dc.subject | DEPOSITION | en_US |
dc.title | Coplanar homojunction a-InGaZnO thin film transistor fabricated using ultraviolet irradiation | en_US |
dc.type | Article | en_US |
dc.relation.no | 101 | - |
dc.relation.volume | 5 | - |
dc.identifier.doi | 10.1039/c5ra16443e | - |
dc.relation.page | 82947-82951 | - |
dc.relation.journal | RSC ADVANCES | - |
dc.contributor.googleauthor | Kim, M.-M. | - |
dc.contributor.googleauthor | Kim, M.-H. | - |
dc.contributor.googleauthor | Ryu, S.-M. | - |
dc.contributor.googleauthor | Lim, J.H. | - |
dc.contributor.googleauthor | Choi, D.-K. | - |
dc.relation.code | 2015011569 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | duck | - |
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