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dc.contributor.author유창식-
dc.date.accessioned2017-05-02T01:26:41Z-
dc.date.available2017-05-02T01:26:41Z-
dc.date.issued2015-08-
dc.identifier.citationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v. 15, NO 4, Page. 493-500en_US
dc.identifier.issn1598-1657-
dc.identifier.issn2233-4866-
dc.identifier.urihttp://www.jsts.org/html/journal/journal_files/2015/08/Year2015Volume15_04_08.pdf-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27110-
dc.description.abstractA flyback converter operates with either pulse width modulation (PWM) or pulse frequency modulation (PFM) control scheme depending on the load current. At light load condition, PFM control is employed to reduce the switching frequency and thereby minimize the switching power loss. For heavier load, PWM control is used to regulate the output voltage of the flyback converter. The flyback controller has been implemented in a 0.35 mu m BCDMOS process and applied to a 40-W flyback converter. The light-load power efficiency of the flyback converter is improved up to 5.7-% comparing with the one operating with a fixed switching frequency.en_US
dc.description.sponsorshipThe CAD tools were provided by the IC Design Education Center (IDEC), Korea. This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2015-H8501-15-1010) supervised by the IITP (Institute for Information & communications Technology Promotion) and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2013R1A2A2A01004958).en_US
dc.language.isoenen_US
dc.publisherIEEK PUBLICATION CENTERen_US
dc.subjectFlyback converteren_US
dc.subjectfrequency reductionen_US
dc.subjectpower efficiencyen_US
dc.subjectpulse width modulation (PWM)en_US
dc.subjectpulse frequency modulation (PFM)en_US
dc.subjectBCDMOSen_US
dc.titleA 40-W Flyback Converter with Dual-Operation Modes for Improved Light Load Efficiencyen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume15-
dc.identifier.doi10.5573/JSTS.2015.15.4.493-
dc.relation.page493-500-
dc.relation.journalJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.contributor.googleauthorKang, Jin-Gyu-
dc.contributor.googleauthorPark, Jeongpyo-
dc.contributor.googleauthorGong, Jung-Chul-
dc.contributor.googleauthorYoo, Changsik-
dc.relation.code2015012440-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidcsyoo-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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