Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2017-04-04T01:21:35Z | - |
dc.date.available | 2017-04-04T01:21:35Z | - |
dc.date.issued | 2015-07 | - |
dc.identifier.citation | CARBON, v. 88, NO CARBON-D-14-02270R2, Page. 26-32 | en_US |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.issn | 1873-3891 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0008622315001608 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26564 | - |
dc.description.abstract | Current-voltage measurements on the Al/self-assembled Au nanoparticles inserted in graphene-oxide (GO) layer/indium-tin-oxide/glass devices at 300 K showed bilateral current bistabilities with four current states in a cell. The multilevel behaviors with four current states were obtained by applying different erasing voltages of -6, -12, and -18 V with a writing voltage of 3 V or different erasing voltages of 8, 14, and 18 V with a writing voltage of -5 V. The resistive memory devices demonstrated bilateral multilevel characteristics due to a nanocomposite consisting of Au nanoparticles inserted in a GO layer. The stabilities of the four current states with 1x 10(-1), 1 x 10(-4), 1 x 10(-6), and 1 x 10(-8) A achieved for the devices by using different erasing voltages were maintained for retention cycles larger than 1 x 10(4) s under a continuous reading test. Memory operating mechanisms and multilevel characteristics based on the I-V curves were described by using the carrier-capture in the self-assembled Au nanoparticles and the local filament-path on the surface between the electrode and the GO layer. (c) 2015 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.subject | GRAPHENE-OXIDE | en_US |
dc.subject | REWRITABLE MEMORY | en_US |
dc.subject | FLASH MEMORY | en_US |
dc.subject | LAYER | en_US |
dc.title | Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics | en_US |
dc.type | Article | en_US |
dc.relation.no | CARBON-D-14-02270R2 | - |
dc.relation.volume | 88 | - |
dc.identifier.doi | 10.1016/j.carbon.2015.02.061 | - |
dc.relation.page | 26-32 | - |
dc.relation.journal | CARBON | - |
dc.contributor.googleauthor | Yun, Dong Yeol | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2015002114 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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