Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2017-02-21T04:30:20Z | - |
dc.date.available | 2017-02-21T04:30:20Z | - |
dc.date.issued | 2015-06 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 12, Page. 1868-1871 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | http://link.springer.com/article/10.3938/jkps.66.1868 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/25571 | - |
dc.description.abstract | The effect of the concentration of poly(3-hexylthiophene) (P3HT) on the electrical characteristics of diode rectifiable devices fabricated utilizing the P3HT was investigated. Atomic force microscopy images showed that the root-mean-square surface roughness of the P3HT thin films decreased with decreasing P3HT concentration. The current-voltage (I-V) characteristics of the Au/P3HT layer/indium-tin-oxide-coated glass devices showed resistance switchability. The I-V characteristics of the devices showed that the ON current at the same voltage decreased with increasing concentration and that the operating voltage of the device with a larger P3HT concentration was larger than that of the device with a smaller P3HT concentration. The diode rectifiable mode of the devices transformed from the Ohmic into the space-charge-limited current modes with increasing applied voltage. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.subject | P3HT | en_US |
dc.subject | Concentration | en_US |
dc.subject | Resistance switchable device | en_US |
dc.subject | Diode rectifiable mode | en_US |
dc.title | Effect of the concentration of the poly(3-hexylthiophene) on the electrical characteristics of diode rectifiable devices | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 66 | - |
dc.identifier.doi | 10.3938/jkps.66.1868 | - |
dc.relation.page | 1868-1871 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Liu, Jun Ting | - |
dc.contributor.googleauthor | Lee, Nam Hyun | - |
dc.contributor.googleauthor | Kim, Yuna | - |
dc.contributor.googleauthor | Oh, Dohyun | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2015000007 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.