Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2016-12-01T06:26:50Z | - |
dc.date.available | 2016-12-01T06:26:50Z | - |
dc.date.issued | 2015-05 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 7, NO 22, Page. 12074-12079 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://pubs.acs.org/doi/abs/10.1021/acsami.5b02251 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/24646 | - |
dc.description.abstract | Two types of tin dioxide (SnO2) films were grown by mist chemical vapor deposition (Mist-CVD), and their electrical properties were studied. A tetragonal phase is obtained when methanol is used as the solvent, while an orthorhombic structure is formed with acetone. The two phases of SnO2 exhibit different electrical properties. Tetragonal SnO2 behaves as a semiconductor, and thin-film transistors (TFTs) incorporating this material as the active layer exhibit n-type characteristics with typical field-effect mobility (mu(FE)) values of approximately 3-4 cm(2)/(V s). On the other hand, orthorhombic SnO2 is found to behave as a metal-like transparent conductive oxide. Density functional theory calculations reveal that orthorhombic SnO2 is more stable under oxygen-rich conditions, which correlates well with the experimentally observed solvent effects. The present study paves the way for the controlled synthesis of functional materials by atmospheric pressure growth techniques. | en_US |
dc.description.sponsorship | This work was mainly supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3A6B1078870), and partially by Industry technology R&D program of MOTIE/KEIT (Grant No. 10051080). Also, this work was partially supported by research fund of Chungnam National University. In particular, the authors thank to Dr. Minseok Choi (Korea Institute of Material Science) for discussing ab initio calculation and electronic structures on Mist-CVD SnO<INF>2</INF> works. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | tin dioxide | en_US |
dc.subject | mist chemical vapor deposition | en_US |
dc.subject | thin-film transistors | en_US |
dc.subject | field-effect mobility | en_US |
dc.subject | active layer | en_US |
dc.subject | density functional theory | en_US |
dc.title | Facile Route to the Controlled Synthesis of Tetragonal and Orthorhombic SnO2 Films by Mist Chemical Vapor Deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 22 | - |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1021/acsami.5b02251 | - |
dc.relation.page | 12074-12079 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Bae, Jae-Yoon | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.contributor.googleauthor | Kim, Hyun You | - |
dc.contributor.googleauthor | Kim, Hyun-Suk | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2015001547 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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