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dc.contributor.author정용재-
dc.date.accessioned2016-10-26T02:42:16Z-
dc.date.available2016-10-26T02:42:16Z-
dc.date.issued2015-04-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v. 7, NO 13, Page. 7163-7169en_US
dc.identifier.issn1944-8244-
dc.identifier.issn1944-8252-
dc.identifier.urihttp://pubs.acs.org/doi/abs/10.1021/acsami.5b00063-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23936-
dc.description.abstractIn the present work, type I, II, and III heterostructures are constructed with the same base material using three representative functionalized monolayer scandium carbides (Sc2CF2, Sc2C(OH)(2), and Sc2CO2) by first-principles calculations based on density functional theory. In contrast to general bilayer heterosystems composed of two-dimensional semiconductors, type I and III heterojunctions are obtained in one Sc2CF2/Sc2CO2 system and the remains of the functionalized Sc2C heterostructures, respectively. It is noteworthy that the same monolayer Sc2CF2 and Sc2CO2 constituents lead to dissimilar heterostructure types in the two Sc2CF2/Sc2CO2 systems by modifying the stacking interface. In addition, in the two Sc2CF2/Sc2CO2 systems, remarkable changes in the heterojunction type are induced by a strain, and two distinct type-II heterostructures are generated where one layer with the conduction band minimum state and the other layer including the valence band maximum level are different. The present work suggests an attractive direction to obtain all heterostructure types with the same base material for novel nanodevices in various fields such as photonics, electronics, and optoelectronics using only the two monolayer components Sc2CF2 and Sc2CO2.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2013R1A1A2A10064432).en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectMXeneen_US
dc.subjectheterostructureen_US
dc.subjecttwo-dimensional materialen_US
dc.subjectsemiconductoren_US
dc.subjectDFTen_US
dc.titleAchieving Type I, II, and III Heterojunctions Using Functionalized MXeneen_US
dc.typeArticleen_US
dc.relation.no13-
dc.relation.volume7-
dc.identifier.doi10.1021/acsami.5b00063-
dc.relation.page7163-7169-
dc.relation.journalACS APPLIED MATERIALS & INTERFACES-
dc.contributor.googleauthorLee, Youngbin-
dc.contributor.googleauthorHwang, Yubin-
dc.contributor.googleauthorChung, Yong-Chae-
dc.relation.code2015001547-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidyongchae-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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