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dc.contributor.author김찬형-
dc.date.accessioned2016-10-21T06:04:09Z-
dc.date.available2016-10-21T06:04:09Z-
dc.date.issued2015-04-
dc.identifier.citationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v. 62, NO 2, Page. 451-479en_US
dc.identifier.issn0018-9499-
dc.identifier.issn1558-1578-
dc.identifier.urihttp://ieeexplore.ieee.org/document/7065332/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23902-
dc.description.abstractBackscattering is a sensitive probe of the accuracy of electron scattering algorithms implemented in Monte Carlo codes. The capability of the Geant4 toolkit to describe realistically the fraction of electrons backscattered from a target volume is extensively and quantitatively evaluated in comparison with experimental data retrieved from the literature. The validation test covers the energy range between approximately 100 eV and 20 MeV, and concerns a wide set of target elements. Multiple and single electron scattering models implemented in Geant4, as well as preassembled selections of physics models distributed within Geant4, are analyzed with statistical methods. The evaluations concern Geant4 versions from 9.1 to 10.1. Significant evolutions are observed over the range of Geant4 versions, not always in the direction of better compatibility with experiment. Goodness-of-fit tests complemented by categorical analysis tests identify a configuration based on Geant4 Urban multiple scattering model in Geant4 version 9.1 and a configuration based on single Coulomb scattering in Geant4 10.0 as the physics options best reproducing experimental data above a few tens of keV. At lower energies only single scattering demonstrates some capability to reproduce data down to a few keV. Recommended preassembled physics configurations appear incapable of describing electron backscattering compatible with experiment. With the support of statistical methods, a correlation is established between the validation of Geant4-based simulation of backscattering and of energy deposition.en_US
dc.description.sponsorshipThe support of the CERN Library has been essential to this study. The authors thank Mihaly Novak for valuable discussions regarding Geant4 multiple scattering models, Sergio Bertolucci for support, Anita Hollier for proofreading the manuscript, Fabio Pratolongo and the Computing Service at INFN Genova for help with the computing hardware used for simulation productions, and Tatsuo Tabata for sharing his data. S. H. Kim thanks CERN PH/SFT Group for the hospitality at CERN during summer 2014.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectElectronsen_US
dc.subjectGeant4en_US
dc.subjectMonte Carloen_US
dc.subjectsimulationen_US
dc.titleValidation Test of Geant4 Simulation of Electron Backscatteringen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume62-
dc.identifier.doi10.1109/TNS.2015.2401055-
dc.relation.page451-479-
dc.relation.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.contributor.googleauthorKim, Sung Hun-
dc.contributor.googleauthorPia, Maria Grazia-
dc.contributor.googleauthorBasaglia, Tullio-
dc.contributor.googleauthorHan, Min Cheol-
dc.contributor.googleauthorHoff, Gabriela-
dc.contributor.googleauthorKim, Chan Hyeong-
dc.contributor.googleauthorSaracco, Paolo-
dc.relation.code2015002510-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF NUCLEAR ENGINEERING-
dc.identifier.pidchkim-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > NUCLEAR ENGINEERING(원자력공학과) > Articles
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