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dc.contributor.author박재근-
dc.date.accessioned2016-10-13T06:34:50Z-
dc.date.available2016-10-13T06:34:50Z-
dc.date.issued2015-04-
dc.identifier.citationNANOTECHNOLOGY, v. 26, NO 19, Page. 195702-195702en_US
dc.identifier.issn0957-4484-
dc.identifier.issn1361-6528-
dc.identifier.urihttp://iopscience.iop.org/article/10.1088/0957-4484/26/19/195702/meta;jsessionid=DF5D4D1EE86EA4689AC16B88AB376DD1.c1.iopscience.cld.iop.org-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23779-
dc.description.abstractThe TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (T-ex) was increased from 275 to 325 degrees C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 degrees C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd](n)-SyAF, abruptly reducing the Delta(1) coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), grant funded by the Korea government (MSIP) (No. 2014R1A2A1A01006474) and the Brian Korea 21 PLUS Program in 2014.en_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectspin transfer torqueen_US
dc.subjectmagnetic random access memoryen_US
dc.subjectmagnetic tunnle junctionsen_US
dc.titleInfluence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layeren_US
dc.typeArticleen_US
dc.relation.no19-
dc.relation.volume26-
dc.identifier.doi10.1088/0957-4484/26/19/195702-
dc.relation.page195702-195702-
dc.relation.journalNANOTECHNOLOGY-
dc.contributor.googleauthorTakemura, Yasutaka-
dc.contributor.googleauthorLee, Du-Yeong-
dc.contributor.googleauthorLee, Seung-Eun-
dc.contributor.googleauthorChae, Kyo-Suk-
dc.contributor.googleauthorShim, Tae-Hun-
dc.contributor.googleauthorLian, Guoda-
dc.contributor.googleauthorKim, Moon-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2015001023-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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