Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2016-10-13T06:34:50Z | - |
dc.date.available | 2016-10-13T06:34:50Z | - |
dc.date.issued | 2015-04 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 26, NO 19, Page. 195702-195702 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1088/0957-4484/26/19/195702/meta;jsessionid=DF5D4D1EE86EA4689AC16B88AB376DD1.c1.iopscience.cld.iop.org | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/23779 | - |
dc.description.abstract | The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (T-ex) was increased from 275 to 325 degrees C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 degrees C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd](n)-SyAF, abruptly reducing the Delta(1) coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), grant funded by the Korea government (MSIP) (No. 2014R1A2A1A01006474) and the Brian Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | spin transfer torque | en_US |
dc.subject | magnetic random access memory | en_US |
dc.subject | magnetic tunnle junctions | en_US |
dc.title | Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 19 | - |
dc.relation.volume | 26 | - |
dc.identifier.doi | 10.1088/0957-4484/26/19/195702 | - |
dc.relation.page | 195702-195702 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Takemura, Yasutaka | - |
dc.contributor.googleauthor | Lee, Du-Yeong | - |
dc.contributor.googleauthor | Lee, Seung-Eun | - |
dc.contributor.googleauthor | Chae, Kyo-Suk | - |
dc.contributor.googleauthor | Shim, Tae-Hun | - |
dc.contributor.googleauthor | Lian, Guoda | - |
dc.contributor.googleauthor | Kim, Moon | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2015001023 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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