Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2016-08-29T04:43:29Z | - |
dc.date.available | 2016-08-29T04:43:29Z | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 143, NO Special SI, Page. 31-36 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0167931715001227 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/22809 | - |
dc.description.abstract | A physical optics simulation was performed to simulate intensity non-uniformity on a wafer passing through an extreme ultraviolet meshed pellicle. The non-uniformity is directly related to the coherence radius of the illumination and the mesh parameters. The intensity non-uniformity was reduced when using illumination conditions with a larger coherence radius in a fixed mesh pitch. The circular illumination sigma(r) = 0.5 can accommodate a five times larger pitch than the dipole illumination sigma(r) = 0.1. An aerial image simulation for a 16 nm half-pitch pattern was also performed to confirm the critical dimension uniformity (CDU) caused by the meshed pellicle. The CDU is directly proportional to the non-uniformity on the wafer in order to determine suitable mesh parameters that produce a small CDU through a non-uniform intensity distribution calculation. The non-uniformity on the wafer should be less than 0.2% in order to achieve the desired CDU less than 0.1 nm. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | Future Semiconductor Device Technology Development Program - MOTIE (Ministry of Trade, Industry Energy) Future Semiconductor Device Technology Development Program - KSRC (Korea Semiconductor Research Consortium) | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | EUVL | en_US |
dc.subject | Pellicle | en_US |
dc.subject | EUV pellicle | en_US |
dc.subject | Meshed pellicle | en_US |
dc.subject | Mask defect control | en_US |
dc.title | Impact of the non-uniform intensity distribution caused by a meshed pellicle of extreme ultraviolet lithography | en_US |
dc.type | Article | en_US |
dc.relation.no | Special SI | - |
dc.relation.volume | 143 | - |
dc.identifier.doi | 10.1016/j.mee.2015.03.009 | - |
dc.relation.page | 31-36 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Ko, Ki-Ho | - |
dc.contributor.googleauthor | Park, Jin-Goo | - |
dc.contributor.googleauthor | Ahn, Jin-Ho | - |
dc.contributor.googleauthor | Yeung, Michael | - |
dc.contributor.googleauthor | Barouch, Eytan | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2015001922 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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