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dc.contributor.author안진호-
dc.date.accessioned2016-08-24T01:32:13Z-
dc.date.available2016-08-24T01:32:13Z-
dc.date.issued2015-03-
dc.identifier.citationMICROELECTRONIC ENGINEERING, v. 136, Page. 48-50en_US
dc.identifier.issn0167-9317-
dc.identifier.issn1873-5568-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0167931715001483-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/22722-
dc.description.abstractWe developed a zirconium oxide (ZrO2) nanoparticle-assisted photonic structure for improving the light extraction efficiency of Y2O3:Eu3+ phosphor films by reverse nano-imprint lithography approach. The structural effect of a two-dimensional (2D) ZrO2 nanoparticle photonic crystal (PC) pattern on the extraction efficiency of photoluminescence (PL) from the underlying Y2O3:Eu3+ phosphor film was investigated. The 2D photonic crystal structure was fabricated using a reverse nano-imprint process with a ZrO2 nanoparticle solution as a nano-imprint resin and a patterned trimethylolpropane propoxylate triacrylate (TPT)/polydimethylsiloxane (PDMS) stamp as a mold. We controlled height of ZrO2 nanoparticle patterns in the range 190-370 nm by varying the height of master mold. This simple process results in 6.9 times improvement of extraction efficiency for a 2D ZrO2 nanoparticle-assisted photonic crystal pattern (h = similar to 370 nm) compared to the conventional Y2O3:Eu3+ thin-film phosphors. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectReverse nano-imprinten_US
dc.subjectZrO2 nanoparticleen_US
dc.subjectTPT/PDMS stampen_US
dc.subjectPhotonic crystalen_US
dc.subjectPhosphor filmen_US
dc.titleThe variation of the enhanced PL efficiency of Y2O3:Eu3+ phosphor films with the height to the ZrO2 nanoparticle-assisted 2D PCL by reverse nano-imprint lithographyen_US
dc.typeArticleen_US
dc.relation.volume136-
dc.identifier.doi10.1016/j.mee.2015.03.035-
dc.relation.page48-50-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorPark, Chulkyun-
dc.contributor.googleauthorKim, Hyojun-
dc.contributor.googleauthorPark, In-Sung-
dc.contributor.googleauthorKo, Ki-Young-
dc.contributor.googleauthorKim, Ki-Kang-
dc.contributor.googleauthorLee, Byoung Hun-
dc.contributor.googleauthorAhn, Jinho-
dc.relation.code2015001922-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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