Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2016-08-24T01:32:13Z | - |
dc.date.available | 2016-08-24T01:32:13Z | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 136, Page. 48-50 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0167931715001483 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/22722 | - |
dc.description.abstract | We developed a zirconium oxide (ZrO2) nanoparticle-assisted photonic structure for improving the light extraction efficiency of Y2O3:Eu3+ phosphor films by reverse nano-imprint lithography approach. The structural effect of a two-dimensional (2D) ZrO2 nanoparticle photonic crystal (PC) pattern on the extraction efficiency of photoluminescence (PL) from the underlying Y2O3:Eu3+ phosphor film was investigated. The 2D photonic crystal structure was fabricated using a reverse nano-imprint process with a ZrO2 nanoparticle solution as a nano-imprint resin and a patterned trimethylolpropane propoxylate triacrylate (TPT)/polydimethylsiloxane (PDMS) stamp as a mold. We controlled height of ZrO2 nanoparticle patterns in the range 190-370 nm by varying the height of master mold. This simple process results in 6.9 times improvement of extraction efficiency for a 2D ZrO2 nanoparticle-assisted photonic crystal pattern (h = similar to 370 nm) compared to the conventional Y2O3:Eu3+ thin-film phosphors. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Reverse nano-imprint | en_US |
dc.subject | ZrO2 nanoparticle | en_US |
dc.subject | TPT/PDMS stamp | en_US |
dc.subject | Photonic crystal | en_US |
dc.subject | Phosphor film | en_US |
dc.title | The variation of the enhanced PL efficiency of Y2O3:Eu3+ phosphor films with the height to the ZrO2 nanoparticle-assisted 2D PCL by reverse nano-imprint lithography | en_US |
dc.type | Article | en_US |
dc.relation.volume | 136 | - |
dc.identifier.doi | 10.1016/j.mee.2015.03.035 | - |
dc.relation.page | 48-50 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Park, Chulkyun | - |
dc.contributor.googleauthor | Kim, Hyojun | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.contributor.googleauthor | Ko, Ki-Young | - |
dc.contributor.googleauthor | Kim, Ki-Kang | - |
dc.contributor.googleauthor | Lee, Byoung Hun | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2015001922 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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