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dc.contributor.author오세용-
dc.date.accessioned2024-09-06T05:22:10Z-
dc.date.available2024-09-06T05:22:10Z-
dc.date.issued2021-10-29-
dc.identifier.citationSCIENCE ADVANCES, v. 7, no 44, page. 1-10en_US
dc.identifier.issn2375-2548en_US
dc.identifier.urihttps://www.science.org/doi/10.1126/sciadv.abg9450en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/192190-
dc.description.abstractWe propose a flexible artificial synapse based on a silicon-indium-zinc-oxide (SIZO)/ion gel hybrid structure directly fabricated on a polyimide substrate, where the channel conductance is effectively modulated via ion movement in the ion gel. This synaptic operation is possible because of the low-temperature deposition process of the SIZO layer (<150°C) and the surface roughness improvement of the poly(4-vinylphenol) buffer layer (12.29→1.81 nm). The flexible synaptic device exhibits extremely stable synaptic performance under high mechanical (bending 1500 times with a radius of 5 mm) and electrical stress (application of voltage pulses 104 times) without any degradation. Last, a sensory-neuromorphic system for sign language translation, which consists of stretchable resistive sensors and flexible artificial synapses, is designed and successfully evaluated via training and recognition simulation using hand sign patterns obtained by stretchable sensors (maximum recognition rate, 99.4%).en_US
dc.description.sponsorship: This research was supported by the Basic Science Research Program, Basic Research Laboratory Program, and Nano-Material Technology Development Program through National Research Foundation of Korea (NRF) grants funded by the Korean government (MSIP) (2020R1A4A200280612, 2019M3F3A1A0107445113, 2020M3F3A2A0208247312, and 2021R1A2C201002611), and the Future Semiconductor Device Technology Development Program (10067739) funded by the Ministry of Trade, Industry and Energy (MOTIE), and the Korean Semiconductor Research Consortium (KSRC). This work was also supported by Samsung Electronics Co. Ltd. (IO201210-07994-01).en_US
dc.languageen_USen_US
dc.publisherAMER ASSOC ADVANCEMENT SCIENCEen_US
dc.relation.ispartofseriesv. 7, no 44;1-10-
dc.titleFlexible artificial Si-In-Zn-O/ion gel synapse and its application to sensory-neuromorphic system for sign language translationen_US
dc.typeArticleen_US
dc.identifier.doi10.1126/sciadv.abg945en_US
dc.relation.journalSCIENCE ADVANCES-
dc.contributor.googleauthorOh, Seyong-
dc.contributor.googleauthorCho, Jeong-Ick-
dc.contributor.googleauthorLee, Byeong Hyeon-
dc.contributor.googleauthorSeo, Seunghwan-
dc.contributor.googleauthorLee, Ju-Hee-
dc.contributor.googleauthorChoo, Hyongsuk-
dc.contributor.googleauthorHeo, Keun-
dc.contributor.googleauthorLee, Sang Yeol-
dc.contributor.googleauthorPark, Jin-Hong-
dc.relation.code2021002655-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentSCHOOL OF ELECTRICAL ENGINEERING-
dc.identifier.pidseyongoh89-
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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