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dc.contributor.author김영현-
dc.date.accessioned2024-07-01T04:20:52Z-
dc.date.available2024-07-01T04:20:52Z-
dc.date.issued2023-11-08-
dc.identifier.citationIEEE PHOTONICS JOURNAL, v. 15, no 6, Page. 1-7en_US
dc.identifier.issn1943-0655en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/10312809en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/191082-
dc.description.abstractWe propose a novel double stripe structure for achieving a narrow far-field angle without significant output power loss in narrow-ridge high-power broad-area laser diodes. By introducing double SiO2 stripes on the top side of the laser diode, we effectively suppress high-order modes through mode weight engineering. Through self-consistent electro-thermal-optical simulations powered by LASTIP with the well-verified model from the reference, we comprehensively analyze and compare the characteristics of high-power broad-area laser diodes utilizing the loss tailoring technique that adopted the much simpler structure compared to prior study and our proposed structure. Our results demonstrate a significant reduction of approximately 36% in the far-field angle while maintaining slope efficiency. This approach shows promise for enhancing the performance of coupling efficiency between narrow-ridge high-power laser diodes and fibers.en_US
dc.description.sponsorshipTechnology Innovation Program (Grant Number: 20015909) 10.13039/501100003662-Korea Evaluation Institute of Industrial Technology Ministry of Trade, Industry & Energy 10.13039/501100003716-Korea Basic Science Institute National research Facilities and Equipment Center 10.13039/100010449-Ministry of Education (Grant Number: 2023R1A6C103A035 and 2021R1A6C101A405)en_US
dc.languageen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.relation.ispartofseriesv. 15, no 6;1-7-
dc.subjectFar-field angleen_US
dc.subjecthigh-power laser diodeen_US
dc.subjectlateral modesen_US
dc.subjectloss tailoringen_US
dc.subjectmode weight engineeringen_US
dc.titleImproved Far-Field Angle in Narrow-Ridge High-Power Laser Diodes Using a Double Stripe Structureen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume15-
dc.identifier.doi10.1109/JPHOT.2023.3331194en_US
dc.relation.page1-7-
dc.relation.journalIEEE PHOTONICS JOURNAL-
dc.contributor.googleauthorKim, Daehong-
dc.contributor.googleauthorYang, Jung-Tack-
dc.contributor.googleauthorChoi, Woo-Young-
dc.contributor.googleauthorKim, Younghyun-
dc.relation.code2023036087-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidyounghyunkim-


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