Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2024-05-29T02:14:56Z | - |
dc.date.available | 2024-05-29T02:14:56Z | - |
dc.date.issued | 2023-07 | - |
dc.identifier.citation | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v. 43, no 8, page. 3376-3382 | en_US |
dc.identifier.issn | 0955-2219 | en_US |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0955221923001073 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/190418 | - |
dc.description.abstract | This study demonstrates atomic layer deposition (ALD) of an extremely thin Al2O3 layer over n-type Bi2Te2.7Se0.3 to alleviate the adverse effects of multiple boundaries on their thermoelectric performance. Multiple boundaries reduce thermal conductivity (kappa), but generate electrons, deviating from the optimum carrier concentration. Only one Al2O3 ALD cycle effectively suppresses Te volatilization at the grain boundaries, resulting in a decrease from 5.8 x 10(19)/cm(3) to 3.6 x 10(19)/cm(3) in the electron concentration. Concurrently, the one-cycle-Al2O3 coating produces fine grains, thus inducing numerous boundaries, ultimately suppressing the lattice kappa from 0.64 to 0.33 W/m center dot K. A further increase in the number of Al2O3 cycles leads in a significant rise in the resistance, resulting in degradation of thermoelectric performance. Consequently, the ZT value is increased by 51 % as a result of Al2O3 coating with a single ALD cycle. Our approach offers new insights into the simultaneous reduction of the kappa and electron concentration in n-type Bi2Te3-based materials. | en_US |
dc.language | en_US | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.relation.ispartofseries | v. 43, no 8;3376-3382 | - |
dc.subject | Thermoelectric materials | en_US |
dc.subject | Grain boundary engineering | en_US |
dc.subject | Carrier concentration | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.title | Grain boundary engineering strategy for simultaneously reducing the electron concentration and lattice thermal conductivity in n-type Bi2Te2.7Se0.3-based thermoelectric materials | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 43 | - |
dc.identifier.doi | 10.1016/j.jeurceramsoc.2023.02.017 | en_US |
dc.relation.page | 3376-3382 | - |
dc.relation.journal | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | - |
dc.contributor.googleauthor | Lee, Seunghyeok | - |
dc.contributor.googleauthor | Jung, Sung-Jin | - |
dc.contributor.googleauthor | Park, Gwang Min | - |
dc.contributor.googleauthor | Hong, Junpyo | - |
dc.contributor.googleauthor | Lee, Albert S. | - |
dc.contributor.googleauthor | Baek, Seung-Hyub | - |
dc.contributor.googleauthor | Kim, Heesuk | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Kim, Jin-Sang | - |
dc.contributor.googleauthor | Kim, Seong Keun | - |
dc.relation.code | 2023033353 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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