Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2024-05-21T00:08:14Z | - |
dc.date.available | 2024-05-21T00:08:14Z | - |
dc.date.issued | 2023-07-24 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 62, NO 7, Page. 1-3 | en_US |
dc.identifier.issn | 1347-4065 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | https://information.hanyang.ac.kr/#/eds/detail?an=edselc.2-52.0-85166198406&dbId=edselc | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/190326 | - |
dc.description.abstract | We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of the peak-gain coefficient. This behavior is contrasted with that of the conventional type-I InGaN/GaN QW structure, whose linewidth enhancement factor increases as the peak-gain coefficient increases. These results can be explained by the peak-gain dependencies of the differential refractive-index change and the differential gain. Moreover, the type-II red InGaN/GaNSb/GaN QW laser yields much smaller values of the linewidth enhancement factor than the conventional type-I InGaN/GaN QW laser. The type-II red InGaN/GaNSb/GaN QW laser with a relatively small, excitation-independent linewidth enhancement factor is expected to be highly useful for many practical applications. | en_US |
dc.description.sponsorship | This research was supported by Nano and Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (Grant 2021M3D1A2048623). | en_US |
dc.language | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.relation.ispartofseries | v. 62, NO 7;1-3 | - |
dc.title | Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 62 | - |
dc.identifier.doi | 10.35848/1347-4065/ace39a | en_US |
dc.relation.page | 1-3 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Park, Seoung-Hwan | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.relation.code | 2023037782 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | dshin | - |
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