High-Resolution Multicolor Patterning of InP Quantum Dot Films by Atomic Layer Deposition of ZnO

Abstract

This paper presents the high-resolution(˃2000 PPI) multicolorpatterning of InP quantum dot films using a conventional photolithographyprocess with a positive photoresist (PR). The solvent resistance ofthe quantum dot (QD) film is achieved by depositing an ultrathin ZnOlayer through atomic layer deposition. This is different from previousstudies, which lack high-resolution patterning or compatibility withindium phosphide (InP) QDs owing to chemical weaknesses. By employinga positive PR with a photoacid generator, the side-by-side patterningprocess yields multicolor patterns of red- and green-colored InP-basedQDs. Additionally, the stacking of each color QD film is achieved.The patterning process can be used to fabricate QD light-emittingdiode devices without degrading their performance. This process canbe used not only for thin (˂100 nm) QD films, which are used inQD-LED devices, but also for thick (˃1 & mu;m) QD films, whichcanbe used in the color-conversion layer with a backlight.