Low-Voltage, High-Performance, Indium-Tin-Zinc-Oxide Thin-Film Transistors Based on Dual-Channel and Anodic-Oxide
- Title
- Low-Voltage, High-Performance, Indium-Tin-Zinc-Oxide Thin-Film Transistors Based on Dual-Channel and Anodic-Oxide
- Author
- 진지동
- Keywords
- indium‐tin‐zinc‐oxide; thin film transistors; indium‐tin‐zinc‐oxide thin film transistors anodization; anodic oxide; dual channel; low voltage operation; Electric apparatus and materials; Electric circuits; Electric networks; TK452-454.4; Physics; QC1-999
- Issue Date
- 2023-03-10
- Publisher
- WILEY
- Citation
- ADVANCED ELECTRONIC MATERIALS, v. 9, NO 3, Page. 1-7
- Abstract
- Oxide semiconductor thin-film transistors (TFTs) with low-voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low-voltage indium-tin-zinc-oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual-channel layer and an anodic-oxide dielectric layer are reported. An ultra-thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual-channel layer consists of an oxygen-uncompensated channel layer and an oxygen-compensated capping layer. It is confirmed that the dual-channel structure is effective for enhancing device performance and bias stability in comparison with the single-channel structure. As a result, the dual-channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm2 Vs−1, a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec−1, a low-voltage operation of 1 V, and good operational stability (threshold voltage shift (ΔVTH) ˂ −0.03 V under a negative gate bias stress and ΔVTH ˂ 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual-channel layer and an anodic-oxide gate dielectric layer, have great potential for low-power, portable, and wearable electronics.
- URI
- https://information.hanyang.ac.kr/#/eds/detail?an=edsdoj.b2c31c0babb24fb19e0a40a2440632fa&dbId=edsdojhttps://repository.hanyang.ac.kr/handle/20.500.11754/189871
- ISSN
- 2199-160X; 2022-0111
- DOI
- 10.1002/aelm.202201117
- Appears in Collections:
- ETC[S] > 연구정보
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML