Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2024-01-09T02:01:45Z | - |
dc.date.available | 2024-01-09T02:01:45Z | - |
dc.date.issued | 2023-12-07 | - |
dc.identifier.citation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 12, NO 12, Page. 1-4 | - |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.issn | 2162-8777 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/188090 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1149/2162-8777/ad0fed | en_US |
dc.description.abstract | This work investigates the turn-on voltage (V on) estimation methods from experimental data of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra from near-ultraviolet to green wavelengths. Three different methods are examined: fixed current intercept, linear fitting of current-voltage curve, and the minimum ideality factor (n ideal). The voltage at minimum n ideal consistently represents the on-state of LEDs since it describes the carrier recombination processes reflected in light output power (LOP) and the external quantum efficiency (EQE). Beyond the voltage at minimum n ideal, samples' LOPs start to increase abruptly, with the EQEs reaching ˃= 54% of the peak EQE values. For V on determined by other methods, samples'LOPs are already turned on and the EQEs exceed their peak value. Therefore, using the minimum n ideal is a suitable method for determining Von of an LED. | en_US |
dc.description.sponsorship | This work was supported by the Industrial Fundamental Technology Development Program (20017391, Development of light source manufacturing technology for micro LED RGB pixels of 360 ppi class stacked structure of 1 inch or more) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea), and the Korea Evaluation Institute of Industrial Technology, (20004946, Development of light source and frontplane technology for ultrahigh resolution pixels over 50 k nits). | en_US |
dc.language | en_US | en_US |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | INTERNAL QUANTUM EFFICIENCY | en_US |
dc.title | Determining the turn-on voltage of GaN-based light-emitting diodes: From near-ultraviolet to green spectra | - |
dc.type | Article | - |
dc.relation.no | 12 | - |
dc.relation.volume | 12 | - |
dc.identifier.doi | 10.1149/2162-8777/ad0fed | en_US |
dc.relation.page | 1-4 | - |
dc.relation.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.contributor.googleauthor | Islam, Abu Bashar Mohammad Hamidul | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Kwak, Joon Seop | - |
dc.relation.code | 2023033418 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | dshin | - |
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