165 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author신동수-
dc.date.accessioned2024-01-09T01:46:26Z-
dc.date.available2024-01-09T01:46:26Z-
dc.date.issued2023-11-30-
dc.identifier.citationELECTRONICS LETTERS, v. 59, no 23, page. 1-3-
dc.identifier.issn0013-5194en_US
dc.identifier.issn1350-911Xen_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/188075-
dc.identifier.urihttps://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.13046en_US
dc.description.abstractThe ideality factor of a diode gives the information on the current conduction or recombination processes occurring inside the device. The ideality factor obtained from the electrical current-voltage (I-V) characteristics by the conventional method is typically masked by the effect of the series resistance at high currents. In this study, from a careful analysis of the I-V characteristics, a new formula that can extract the inherent ideality factor without the effect of the series resistance is presented and experimentally tested with a blue light-emitting diode. The new ideality factor thus obtained is compared with the one by the photovoltaic measurement.,The inherent ideality factor of a diode can be extracted by innovatively analyzing the diode equation with the voltage drop outside the junction taken into account. The ideality factor values thus evaluated do not show the masking effect by the series resistance at high currents, as obtained by the conventional formula. image,en_US
dc.description.sponsorshipThis work was supported in part by the AdvancedTechnology Center Plus program under Grant 20022894 and by theTechnology Innovation Program under Grant 20022368, funded by theMinistry of Trade, Industry and Energy, Republic of Korea.en_US
dc.languageen_USen_US
dc.publisherWILEY-
dc.relation.ispartofseriesv. 59, no 23;1-3-
dc.titleExtracting the inherent ideality factor of a diode from electrical current-voltage characteristics-
dc.typeArticle-
dc.relation.no23-
dc.relation.volume59-
dc.identifier.doihttps://doi.org/10.1049/ell2.13046en_US
dc.relation.page1-3-
dc.relation.journalELECTRONICS LETTERS-
dc.contributor.googleauthorPark, Jaehyeok-
dc.contributor.googleauthorYu, Chaeyoon-
dc.contributor.googleauthorMin, Sangjin-
dc.contributor.googleauthorShim, Jong-In-
dc.contributor.googleauthorShin, Dong-Soo-
dc.relation.code2023035361-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.piddshin-


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE