Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오새룬터 | - |
dc.date.accessioned | 2023-12-21T07:42:59Z | - |
dc.date.available | 2023-12-21T07:42:59Z | - |
dc.date.issued | 2023-10 | - |
dc.identifier.citation | IEEE Electron Device Letters, v. 44, NO. 10, Page. 1.0-4.0 | - |
dc.identifier.issn | 0741-3106;1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/10224529 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/187675 | - |
dc.description.abstract | Oxide semiconductor thin-film transistors (TFTs) with various device dimensions are integrated on the same substrate for different purposes and functionality. However, unlike length scalability, the width-dependence of oxide TFTs is seldom reported. Current increase proportional to the channel width and lower threshold voltage (<italic>Vth</italic>) are found in devices with wide channel width. In this study, we investigate InGaZnO TFTs with various widths to examine the width-dependent characteristics via device characterization and simulation. We introduce a random potential distribution (RPD) model to reproduce the observed device characteristics at different dimensions. The RPD model shows that devices with larger channel width and shorter gate length have a high probability to form conductive paths at a lower Fermi level, resulting in a decreased <italic>Vth</italic> agreeing with experimental characteristics. IEEE | - |
dc.description.sponsorship | This work was supported in part by Samsung Display Company, in part by the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under Grant 2021R1F1A1060444 and Grant 2022M3F3A2A01072215, and in part by the IC Design Education Center (IDEC). The review of this letter was arranged by Editor V. Moroz | - |
dc.language | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.subject | Amorphous oxide semiconductor | - |
dc.subject | channel width dependence | - |
dc.subject | Gate drivers | - |
dc.subject | Logic gates | - |
dc.subject | random potential distribution model | - |
dc.subject | Scalability | - |
dc.subject | Semiconductor device modeling | - |
dc.subject | Thin film transistors | - |
dc.subject | thin-film transistor | - |
dc.subject | Transistors | - |
dc.subject | Transmission line measurements | - |
dc.subject | wide-width effect | - |
dc.title | Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits | - |
dc.type | Article | - |
dc.relation.no | 10 | - |
dc.relation.volume | 44 | - |
dc.identifier.doi | 10.1109/LED.2023.3306287 | - |
dc.relation.page | 1.0-4.0 | - |
dc.relation.journal | IEEE Electron Device Letters | - |
dc.contributor.googleauthor | Kim, Kihwan | - |
dc.contributor.googleauthor | Kim, Su Hyun | - |
dc.contributor.googleauthor | Kim, Mingoo | - |
dc.contributor.googleauthor | Lim, Jun Hyung | - |
dc.contributor.googleauthor | Park, Joon Seok | - |
dc.contributor.googleauthor | Oh, Saeroonter | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 전자공학부 | - |
dc.identifier.pid | sroonter | - |
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