Research on nonlinear selector based on defect control through insertion of Te material in HfO2 insulating layer

Abstract

Currently, when constructing a 3D X-point crossbar memory cell with ReRAM, a next-generation nonvolatile memory element, a two-terminal bidirectional selector element is being studied necessarily due to leakage current. OTS (Ovonic Threshold Switching) devices are one of the promising candidates proposed as 3D stackable devices consisting of chalcogenide materials. However, various studies are being conducted to overcome the limitations of current blocking difficulty below nA, low thermal stability, and difficulty in securing reliability of the device for OTS selector devices.

In this paper, a new concept selector device with a chalcogenide material doped into a binary oxide is introduced. It addresses advanced features by implementing a chalcogenide material-based selector device doped with HfOx based Te that ensures current cut-off below nA, switching above 104 and device reliability.