Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 심종인 | - |
| dc.date.accessioned | 2023-08-03T01:32:59Z | - |
| dc.date.available | 2023-08-03T01:32:59Z | - |
| dc.date.issued | 2013-08 | - |
| dc.identifier.citation | 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013, article no. 6633151, Page. 115-116 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/6633151 | en_US |
| dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/185130 | - |
| dc.description.abstract | Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths. © 2013 IEEE. | - |
| dc.language | en | - |
| dc.publisher | IEEE | - |
| dc.title | Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/NUSOD.2013.6633151 | - |
| dc.relation.page | 115-116 | - |
| dc.relation.journal | 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013 | - |
| dc.contributor.googleauthor | Ryu, Han-Youl | - |
| dc.contributor.googleauthor | Shim, Jong In | - |
| dc.sector.campus | E | - |
| dc.sector.daehak | 과학기술융합대학 | - |
| dc.sector.department | 나노광전자학과 | - |
| dc.identifier.pid | jishim | - |
| dc.identifier.article | 6633151 | - |
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