Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2023-08-03T01:32:02Z | - |
dc.date.available | 2023-08-03T01:32:02Z | - |
dc.date.issued | 2023-05 | - |
dc.identifier.citation | Optics Express, v. 31, NO. 10, Page. 15779-15790 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://opg.optica.org/oe/fulltext.cfm?uri=oe-31-10-15779&id=530106 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/185126 | - |
dc.description.abstract | In this study, we aimed to better understand the mechanism for creating carrier localization centers (CLCs) in Ga0.70In0.30N/GaN quantum wells (QWs) and examine their impacts on device performance. Particularly, we focused on the incorporation of native defects into the QWs as a main cause of the mechanism behind the CLC creation. For this purpose, we prepared two GaInN-based LED samples with and without pre-trimethylindium (TMIn) flow-treated QWs. Here, the QWs were subjected to a pre-TMIn flow treatment to control the incorporation of defects/impurities in the QWs. In an effort to investigate how the pre-TMIn flow treatment affects the incorporation of native defects into the QWs, we employed steadystate photo-capacitance and photo-assisted capacitance-voltage measurements, and acquired high-resolution micro-charge-coupled device images. The experimental results showed that CLC creation in the QWs during growth is closely related to the native defects, most likely VN-related defects/complexes, since they have a strong affinity to In atoms and the nature of clustering. Moreover, the CLC creation is fatal to the performance of the yellow-red QWs since they simultaneously increase the non-radiative recombination rate, decrease the radiative recombination rate, and increase operating voltage-unlike blue QWs. | - |
dc.description.sponsorship | Nano & Material Technology Development Program through the National Research Foundation of Korea funded by Ministry of Science and ICT, South Korea (2021M3D1A2048623) . | - |
dc.language | en | - |
dc.publisher | Optical Society of America | - |
dc.title | Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells | - |
dc.type | Article | - |
dc.relation.no | 10 | - |
dc.relation.volume | 31 | - |
dc.identifier.doi | 10.1364/OE.486721 | - |
dc.relation.page | 15779-15790 | - |
dc.relation.journal | Optics Express | - |
dc.contributor.googleauthor | Han, Dong-Pyo | - |
dc.contributor.googleauthor | Kim, Jiwon | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | jishim | - |
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