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dc.contributor.author심종인-
dc.date.accessioned2023-07-21T02:35:28Z-
dc.date.available2023-07-21T02:35:28Z-
dc.date.issued2007-02-
dc.identifier.citationJournal of the Korean Physical Society, v. 50, NO. 2, Page. L365-L367-
dc.identifier.issn0374-4884;1976-8524-
dc.identifier.urifile:///C:/Users/armian/Downloads/JP-50-2-365.pdfen_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184077-
dc.description.abstractA measurement method for the linewidth enhancement factor of a semiconductor Fabry-Perot (FP) laser operating above threshold is presented. This measurement method is designed to have a simple structure and an extend operational range. The active carrier density of the FP laser is modulated by optical injection locking, which makes it possible to measure the variation of optical spectrum from the injected optical frequency.-
dc.description.sponsorshipThis work is supported by the BK21 program, Korea.-
dc.languageen-
dc.publisher한국물리학회-
dc.subjectsemiconductor FP laser-
dc.subjectalpha-factor-
dc.subjectoptical injection locking-
dc.titleA simple method for measurement of the alpha-factor in semiconductor Fabry-Perot lasers operating above threshold-
dc.typeArticle-
dc.relation.no2-
dc.relation.volume50-
dc.relation.pageL365-L367-
dc.relation.journalJournal of the Korean Physical Society-
dc.contributor.googleauthorShim, Jongin-
dc.contributor.googleauthorYoo, Kyungyul-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-


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