121 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author심종인-
dc.date.accessioned2023-07-21T02:33:36Z-
dc.date.available2023-07-21T02:33:36Z-
dc.date.issued2009-06-
dc.identifier.citationElectronics Letters, v. 45, NO. 13, Page. 703-705-
dc.identifier.issn0013-5194;1350-911X-
dc.identifier.urihttps://digital-library.theiet.org/content/journals/10.1049/el.2009.0803en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184070-
dc.description.abstractAn electrode pattern design methodology that improves the current uniformity in mesa-structured GaN/InGaN blue light-emitting diodes (LEDs) is investigated. Comparisons between an LED with a new electrode pattern adopting the proposed methodology and an LED with a commercially used electrode are made in view of both current and luminance distributions. Simulations as well as experimental results show that the proposed simple design methodology is very effective to spread current more uniformly in the active layer.-
dc.description.sponsorshipthe Korea Science and Engineering Foundation (KOSEF) funded by the Korean government (MOST) (no. R01-2007-000-20048-0-2008).-
dc.languageen-
dc.publisherInstitute of Electrical Engineers-
dc.titleEnhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs-
dc.typeArticle-
dc.relation.no13-
dc.relation.volume45-
dc.identifier.doi10.1049/el.2009.0803-
dc.relation.page703-705-
dc.relation.journalElectronics Letters-
dc.contributor.googleauthorYun, Joosun-
dc.contributor.googleauthorShim, Jongin-
dc.contributor.googleauthorShin, Dongsoo-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE