Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2023-07-21T01:13:17Z | - |
dc.date.available | 2023-07-21T01:13:17Z | - |
dc.date.issued | 2013-06 | - |
dc.identifier.citation | Applied Physics Express, v. 6, NO. 6, article no. 062101, Page. 1-5 | - |
dc.identifier.issn | 1882-0778;1882-0786 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.7567/APEX.6.062101 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/184043 | - |
dc.description.abstract | Light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip and vertical LED structures, LEE is obtained to be <10% due to strong DUV light absorption in the p-GaN layer. In flip-chip LEDs, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of DUV LEDs with decreasing wavelength. It is also found that vertical LED structures can have advantages over flip-chip structures for increasing LEE in the TM mode. (C) 2013 The Japan Society of Applied Physics | - |
dc.description.sponsorship | This work was supported by the Industrial Strategic Technology Development Program, 10032099 (Development of commercialized technologies for performance and failure analyses of chip- or wafer-level light-emitting diodes) and 10041878 (Development of WPE 75% LED device process and standard evaluation technology) funded by the Ministry of Knowledge Economy (MKE), Korea. | - |
dc.language | en | - |
dc.publisher | Japan Soc of Applied Physics | - |
dc.subject | GAN | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | DEPENDENCE | - |
dc.title | Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes | - |
dc.type | Article | - |
dc.relation.no | 6 | - |
dc.relation.volume | 6 | - |
dc.identifier.doi | 10.7567/APEX.6.062101 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | Applied Physics Express | - |
dc.contributor.googleauthor | Ryu, Han-Youl | - |
dc.contributor.googleauthor | Choi, Il-Gyun | - |
dc.contributor.googleauthor | Choi, Hyo-Sik | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | jishim | - |
dc.identifier.article | 062101 | - |
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