Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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dc.contributor.author심종인-
dc.date.accessioned2023-07-21T01:02:47Z-
dc.date.available2023-07-21T01:02:47Z-
dc.date.issued2013-07-
dc.identifier.citationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, article no. 6600378, Page. 1-2-
dc.identifier.urihttps://ieeexplore.ieee.org/document/6600378en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184041-
dc.description.abstractOptical gain characteristics of dip-shaped AlGaN/AlN quantum well (QW) structures in deep-ultraviolet (UV) spectral region were investigated using non-Markovian model with the many-body effect. For a high Al composition of 0.85, the conventional AlGaN/AlN QW structure shows that TM-polarization is dominant. On the other hand, with the inclusion of the lower bandgap AlGaN layer, the polarization property changes from TM-polarization to TE-polarization with a small wavelength change. © 2013 IEEE.-
dc.languageen-
dc.publisherIEEE-
dc.titleDip-shaped AlGaN/AlN quantum well structures with high TE-polarized optical gain-
dc.typeArticle-
dc.identifier.doi10.1109/CLEOPR.2013.6600378-
dc.relation.page1-2-
dc.relation.journalPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest-
dc.contributor.googleauthorPark, Seoung-Hwan-
dc.contributor.googleauthorShim, Jong In-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-
dc.identifier.article6600378-
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