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DC FieldValueLanguage
dc.contributor.author심종인-
dc.date.accessioned2023-07-21T01:02:13Z-
dc.date.available2023-07-21T01:02:13Z-
dc.date.issued2013-07-
dc.identifier.citationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, article no. 6600210, Page. 1-2-
dc.identifier.urihttps://ieeexplore.ieee.org/document/6600210en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184040-
dc.description.abstractLight extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths. © 2013 IEEE.-
dc.languageen-
dc.publisherIEEE-
dc.titleNumerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes-
dc.typeArticle-
dc.identifier.doi10.1109/CLEOPR.2013.6600210-
dc.relation.page1-2-
dc.relation.journalPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest-
dc.contributor.googleauthorRyu, Han-Youl-
dc.contributor.googleauthorChoi, Il-Gyun-
dc.contributor.googleauthorChoi, Hyo-Sik-
dc.contributor.googleauthorShim, Jong In-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-
dc.identifier.article6600210-


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