Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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dc.contributor.author심종인-
dc.date.accessioned2023-07-21T01:01:57Z-
dc.date.available2023-07-21T01:01:57Z-
dc.date.issued2013-07-
dc.identifier.citationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, article no. 6600207, Page. 1-2-
dc.identifier.urihttps://ieeexplore.ieee.org/document/6600207en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184039-
dc.description.abstractAn origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. © 2013 IEEE.-
dc.description.sponsorshipthe Industrial Strategic technology development program, 10041878, Development of WPE 75% LED device process and standard evaluation technology funded by the Ministry of Knowledge Economy(MKE, Korea)-
dc.languageen-
dc.publisherIEEE-
dc.titleDroop studies for high-performance InGaN blue light-emitting diodes-
dc.typeArticle-
dc.identifier.doi10.1109/CLEOPR.2013.6600207-
dc.relation.page1-2-
dc.relation.journalPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest-
dc.contributor.googleauthorShim, Jong-In-
dc.contributor.googleauthorKim, Hyunsung-
dc.contributor.googleauthorHan, Dong-Pyo-
dc.contributor.googleauthorShin, Dong-Soo-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-
dc.identifier.article6600207-
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