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dc.contributor.author심종인-
dc.date.accessioned2023-07-21T01:00:32Z-
dc.date.available2023-07-21T01:00:32Z-
dc.date.issued2013-12-
dc.identifier.citationIEEE Journal of Quantum Electronics, v. 49, NO. 12, Page. 1062-1065-
dc.identifier.issn0018-9197;1558-1713-
dc.identifier.urihttps://ieeexplore.ieee.org/document/6646228en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184034-
dc.description.abstractWe demonstrate a method of systematic analysis for the photocurrent spectroscopy on InGaN/GaN light-emitting diodes (LEDs). By normalizing photocurrent data at a photon energy of 3.2 eV for blue LEDs, we show that accurate comparison of active quantum wells is possible. Bias-dependent photocurrent measurements reveal that there are fixed points in photocurrent data from which an effective bandgap energy can be determined. The method presented in this paper can be useful when one needs to compare the LEDs fabricated at different times or by different processes.-
dc.description.sponsorshipthe Industrial Strategic Technology Development Program under Grant 10041878 funded by the Ministry of Knowledge Economy, Korea.-
dc.languageen-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.subjectPhotocurrent spectroscopy-
dc.subjectlight-emitting diode-
dc.subjectStokes shift-
dc.subjectjoint density of states-
dc.titleSystematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes-
dc.typeArticle-
dc.relation.no12-
dc.relation.volume49-
dc.identifier.doi10.1109/JQE.2013.2287100-
dc.relation.page1062-1065-
dc.relation.journalIEEE Journal of Quantum Electronics-
dc.contributor.googleauthorShin, Dong-Soo-
dc.contributor.googleauthorLee, Jong-Ik-
dc.contributor.googleauthorShim, Jong-In-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-


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