Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2023-07-21T01:00:00Z | - |
dc.date.available | 2023-07-21T01:00:00Z | - |
dc.date.issued | 2014-03 | - |
dc.identifier.citation | Applied Physics Letters, v. 104, NO. 9, article no. 091110, Page. 1-5 | - |
dc.identifier.issn | 0003-6951;1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4867647 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/184032 | - |
dc.description.abstract | Two kinds of green InGaN light emitting diodes (LEDs) have been investigated in order to understand the different slopes in logarithmic light output power-current (L-I) curves. Through the analysis of the carrier rate equation and by considering the carrier density-dependent the injection efficiency into quantum wells, the slopes of the logarithmic L-I curves can be more rigorously understood. The low current level, two as the tunneling current is initially dominant. The high current level beyond the peak of the external quantum efficiency (EQE) diminishes below one as the carrier overflow becomes dominant. In addition, the normalized carrier injection efficiency can be obtained by analyzing the slopes of the logarithmic L-I curves. The carrier injection efficiency decreases after the EQE peak of the InGaN LEDs, determined from the analysis of the slopes of the logarithmic L-I curves. (C) 2014 AIP Publishing LLC. | - |
dc.description.sponsorship | This work was supported by the Industrial Strategic Technology Development Program, 10041878, Development of the WPE 75% LED device process and standard evaluation technology funded by the Ministry of Knowledge Economy(MKE, Korea). | - |
dc.language | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes | - |
dc.type | Article | - |
dc.relation.no | 9 | - |
dc.relation.volume | 104 | - |
dc.identifier.doi | 10.1063/1.4867647 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | Applied Physics Letters | - |
dc.contributor.googleauthor | Kim, Kyu-Sang | - |
dc.contributor.googleauthor | Han, Dong-Pyo | - |
dc.contributor.googleauthor | Kim, Hyun-Sung | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | jishim | - |
dc.identifier.article | 091110 | - |
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