Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 심종인 | - |
| dc.date.accessioned | 2023-07-21T00:58:56Z | - |
| dc.date.available | 2023-07-21T00:58:56Z | - |
| dc.date.issued | 2014-11 | - |
| dc.identifier.citation | Asia Communications and Photonics Conference, ACP, article no. 8687501, Page. 1-3 | - |
| dc.identifier.issn | 2162-108X | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/8687501?arnumber=8687501&SID=EBSCO:edseee | en_US |
| dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/184029 | - |
| dc.description.abstract | Experimental efficiency droop phenomena have been consistently explained by the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. ? OSA 2014 | - |
| dc.description.sponsorship | the Industrial Strategic Technology Development Program (10041878): ‘Development of WPE 75% LED device process and standard evaluation technology’ funded by the Ministry of Trade, Economy & Energy (MOTIE), Korea. | - |
| dc.language | en | - |
| dc.publisher | OSA - The Optical Society | - |
| dc.title | Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1364/acpc.2014.ath4i.2 | - |
| dc.relation.page | 1-3 | - |
| dc.relation.journal | Asia Communications and Photonics Conference, ACP | - |
| dc.contributor.googleauthor | Shim, Jong-In | - |
| dc.contributor.googleauthor | Kim, Hyunsung | - |
| dc.contributor.googleauthor | Shin, Dong Soo | - |
| dc.sector.campus | E | - |
| dc.sector.daehak | 과학기술융합대학 | - |
| dc.sector.department | 나노광전자학과 | - |
| dc.identifier.pid | jishim | - |
| dc.identifier.article | 8687501 | - |
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