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dc.contributor.author심종인-
dc.date.accessioned2023-07-21T00:57:27Z-
dc.date.available2023-07-21T00:57:27Z-
dc.date.issued2015-09-
dc.identifier.citationOptics InfoBase Conference Papers, v. Part F132-JSAP 2019, Page. 1-1-
dc.identifier.urihttps://opg.optica.org/abstract.cfm?uri=JSAP-2015-14p_2D_2&ibsearch=falseen_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184024-
dc.description.abstractNowadays, blue light-emitting diodes (LEDs) are being utilized in various applications ranging from the backlight units of liquid crystal displays to the general lighting. Blue LEDs, which forms the basis of high-efficiency white light sources, have various properties unique to the InGaN/GaN material system. While many technical difficulties in fabricating the efficient GaN LEDs have been overcome, there still remain issues in further improving the efficiency. The first step to improve the performance is the accurate characterization of the device. In this presentation, various optoelectronic characterization techniques will be discussed to highlight the characteristics of blue LEDs based on the InGaN/GaN material system.-
dc.languageen-
dc.publisherOSA - The Optical Society-
dc.titlePerformance analysis of light-emitting diodes by optoelectronic characterizations-
dc.typeArticle-
dc.relation.volumePart F132-JSAP 2019-
dc.relation.page1-1-
dc.relation.journalOptics InfoBase Conference Papers-
dc.contributor.googleauthorShin, Dong Soo-
dc.contributor.googleauthorChoi, Won-Jin-
dc.contributor.googleauthorShim, Jong In-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-


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