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dc.contributor.author심종인-
dc.date.accessioned2023-07-21T00:56:30Z-
dc.date.available2023-07-21T00:56:30Z-
dc.date.issued2016-01-
dc.identifier.citation2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v. 2, article no. 7376171, Page. 1-2-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7376171en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184021-
dc.description.abstractThis paper reports the analysis of the near-ultraviolet light-emitting-diodes (NUV LEDs) characteristics with increasing the number of QWs from 5 to 7 by same growth process. By means of optical, electrical characterization and carrier rate equation analysis, we show that the NUV LEDs performances were improved with increasing the number of QWs by decreasing the non-radiative recombination rate. © 2015 IEEE.-
dc.description.sponsorshipThis work was supported by the research fund of Hanyang University (HY-2012-N)-
dc.languageen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleAnalysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs-
dc.typeArticle-
dc.relation.volume2-
dc.identifier.doi10.1109/CLEOPR.2015.7376171-
dc.relation.page1-2-
dc.relation.journal2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.contributor.googleauthorChoi, H.-S.-
dc.contributor.googleauthorShim, J.-I.-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-
dc.identifier.article7376171-


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