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dc.contributor.author심종인-
dc.date.accessioned2023-07-21T00:56:14Z-
dc.date.available2023-07-21T00:56:14Z-
dc.date.issued2016-01-
dc.identifier.citation2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v. 2, article no. 7376077, Page. 1-2-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7376077en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184020-
dc.description.abstractWe analyzed the influence of a current aging on 380 nm band near-ultraviolet light-emitting diodes with different current densities. Aging have been carried out on LEDs with current densities of 5, 35 and 50 A/cm2 at room temperature for 1000 h. After stressed, both optical and electrical characteristics of LEDS are getting worse as increasing aging current density. We suggest that the possible degradation mechanism of characteristics is increase of the non-radiative (NR) recombination of LEDs due to generation of NR recombination centers in active regions after a current aging. © 2015 IEEE.-
dc.description.sponsorshipThis work was supported by the research fund of Hanyang University (HY-2012-N)-
dc.languageen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleInfluence of current aging on the characteristics of Near-Ultraviolet LEDs-
dc.typeArticle-
dc.relation.volume2-
dc.identifier.doi10.1109/CLEOPR.2015.7376077-
dc.relation.page1-2-
dc.relation.journal2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.contributor.googleauthorChoi, Hyo-Shik-
dc.contributor.googleauthorShim, Jong-In-
dc.contributor.googleauthorChoi, Won-Jin-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-
dc.identifier.article7376077-


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