117 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author심종인-
dc.date.accessioned2023-07-21T00:55:00Z-
dc.date.available2023-07-21T00:55:00Z-
dc.date.issued2016-01-
dc.identifier.citation2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v. 1, article no. 7375898, Page. 1-2-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7375898en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/184016-
dc.description.abstractTo investigate the efficiency droop in InGaN-based light-emitting diodes, we have measured the differential carrier lifetimes using the electrical method. After separating the radiative and non-radiative carrier lifetimes using the internal quantum efficiency, we discuss their implications. © 2015 IEEE.-
dc.description.sponsorshipthe Industrial Strategic Technology Development Program under Grant 10041878, “Development of the WPE 75% LED device process and standard evaluation technology,” funded by the Ministry of Trade, Industry and Energy, Republic of Korea.-
dc.languageen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleRadiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis-
dc.typeArticle-
dc.relation.volume1-
dc.identifier.doi10.1109/CLEOPR.2015.7375898-
dc.relation.page1-2-
dc.relation.journal2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.contributor.googleauthorKim, Young-Jin-
dc.contributor.googleauthorHan, Dong-Pyo-
dc.contributor.googleauthorLee, Gyeong Won-
dc.contributor.googleauthorShin, Dong Soo-
dc.contributor.googleauthorShim, Jong In-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-
dc.identifier.article7375898-


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE