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dc.contributor.author노정진-
dc.date.accessioned2023-07-13T01:51:47Z-
dc.date.available2023-07-13T01:51:47Z-
dc.date.issued2019-10-
dc.identifier.citationProceedings - 2019 International SoC Design Conference, ISOCC 2019, article no. 9027699, Page. 54-55-
dc.identifier.issn2163-9612-
dc.identifier.urihttps://ieeexplore.ieee.org/document/9027699en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/183444-
dc.description.abstractThis paper presents a compensation technique for a power supply rejection (PSR) improved external capacitor-less low drop-out (LDO) regulator. A replica circuit is used to cancel the power supply noise generated by the gate-source parasitic capacitor of the pass transistor. This design was fabricated in a 0.18 μm bipolar-CMOS-DMOS (BCD) technology with a power supply of 1.8 V. The active core chip area is 0.023 mm2, and the entire proposed LDO consumes 65 μA of quiescent current. It has a drop-out voltage of 200 mV, and the maximum load current is 60 mA. The measured PSR has a maximum-22 dB enhancement compared with a conventional uncompensated LDO when delivering a current of 60 mA. © 2019 IEEE.-
dc.languageen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.subjectexternal capacitor-less LDO-
dc.subjectpower management integrated circuit (PMIC)-
dc.subjectPSR compensated LDO-
dc.titleA Power Supply Rejection Compensated External Capacitor-Less Low Drop-Out Regulator-
dc.typeArticle-
dc.identifier.doi10.1109/ISOCC47750.2019.9027699-
dc.relation.page54-55-
dc.relation.journalProceedings - 2019 International SoC Design Conference, ISOCC 2019-
dc.contributor.googleauthorGuo, Tian-
dc.contributor.googleauthorMoon, Jiho-
dc.contributor.googleauthorRoh, Jeongjin-
dc.sector.campusE-
dc.sector.daehak공학대학-
dc.sector.department전자공학부-
dc.identifier.pidjroh-
dc.identifier.article9027699-
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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