Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오재응 | - |
dc.date.accessioned | 2023-07-10T01:15:57Z | - |
dc.date.available | 2023-07-10T01:15:57Z | - |
dc.date.issued | 2010-04 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 49, NO. 4, article no. 041002, | - |
dc.identifier.issn | 0021-4922;1347-4065 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1143/JJAP.49.041002 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/182730 | - |
dc.description.abstract | The surface of AlGaN/GaN high-electron-mobility transistors (HEMTs) tends to be easily damaged during device fabrication, especially during high-temperature annealing. In order to resolve this problem, a prepassivation process was developed using remote-mode plasma-enhanced chemical vapor deposition (RPECVD) systems. It is important in the prepassivation process to protect the region under the gate during high-temperature ohmic annealing and utilize a low-damage SiNx etching process to minimize any surface damage. It was observed that the DC characteristics were significantly improved and the current collapse phenomenon was markedly suppressed for AlGaN/GaN HEMTs by employing the prepassivation process proposed in this work in comparison with a conventional process. According to the experimental results, the prepassivation process coupled with a gate field plate successfully suppressed the current collapse phenomenon in AlGaN/GaN HEMTs. RF output power densities of 6.9 W/mm at 2.3 GHz and >8.9 W/mm at 4 GHz were achieved for AlGaN/GaN HEMTs on Si and SiC substrates, respectively. (C) 2010 The Japan Society of Applied Physics | - |
dc.language | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | SiNx Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.relation.no | 4 | - |
dc.relation.volume | 49 | - |
dc.identifier.doi | 10.1143/JJAP.49.041002 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Her, Jin-Cherl | - |
dc.contributor.googleauthor | Cho, Hyun-Jun | - |
dc.contributor.googleauthor | Yoo, Chan-Sei | - |
dc.contributor.googleauthor | Cha, Ho-Young | - |
dc.contributor.googleauthor | Oh, Jae-Eung | - |
dc.contributor.googleauthor | Seo, Kwang-Seok | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 전자공학부 | - |
dc.identifier.pid | joh | - |
dc.identifier.article | 041002 | - |
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