Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorods
- Title
- Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorods
- Author
- 오재응
- Keywords
- Nanostructures; GaN; PA-MBE; Morphology; Photoluminescence
- Issue Date
- 2015-09
- Publisher
- ELSEVIER
- Citation
- CURRENT APPLIED PHYSICS, v. 15, NO. supple.2, Page. S2-S6
- Abstract
- InGaN nanodisk embedded GaN nanorods (NRs) with different p-GaN morphologies were grown on Si(111) substrate by plasma-assisted molecular beam epitaxy. Tapered and non-tapered p-GaN top was obtained by varying the growth conditions namely growth temperature and N-2 plasma power, and the morphology evolution was explained based on the interrelation between sidewall diffusion and direct impingement during the NRs growth. Photoluminescence measurements revealed higher light emission for tapered p-GaN when compared to non-tapered structure. APSYS simulations were further conducted to theoretically confirm the observed experimental results. Our results indicate that the fabrication of InGaN-GaN multi-quantum well NRs light emitting diodes (LEDs) with tapered top p-GaN will be a promising approach for the realization of high brightness LEDs. (C) 2015 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S1567173915001480?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/182705
- ISSN
- 1567-1739;1878-1675
- DOI
- 10.1016/j.cap.2015.04.029
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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