Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2023-06-01T01:44:10Z | - |
dc.date.available | 2023-06-01T01:44:10Z | - |
dc.date.issued | 2005-12 | - |
dc.identifier.citation | 이학기술연구지, v. 8, Page. 43-47 | - |
dc.identifier.issn | 20059051 | - |
dc.identifier.uri | http://www.earticle.net/Article.aspx?sn=106215 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181947 | - |
dc.description.abstract | Extreme ultraviolet lithography (EUVL) is believed to be the next generation lithography and so it is seriously under study globally. The near-field intensity on the EUVL mask is affected by the mask structure. The absorber and the buffer layer make a shadow since the light is shining on the mask at some angle to the normal on-axis. This shadow effect in the EUVL mask is an important factor that decreases the contrast of the aerial image and, as a result, causes a line width variation and a pattern shift. Among the several possible mask structures, we focused on the mask edge slope variation with a typical incident angle of 5°. We analyzed electromagnetic wave around the mask by rigorous coupled-wave analysis (RCWA) and reflectivity in the modified mask structure. | - |
dc.language | en | - |
dc.publisher | 한양대학교 이학기술연구소 | - |
dc.title | Mask modification for the shadow effect reduction by Rigorous coupled-wave analysis in extreme ultraviolet lithography | - |
dc.title.alternative | Rigorous coupled-wave analysis를 이용한 극자외선 리소그래피에서 그림자 효과를 줄이기 위한 마스크 변형 | - |
dc.type | Article | - |
dc.relation.volume | 8 | - |
dc.relation.page | 43-47 | - |
dc.relation.journal | 이학기술연구지 | - |
dc.contributor.googleauthor | 최민기 | - |
dc.contributor.googleauthor | 신동수 | - |
dc.contributor.googleauthor | 오혜근 | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | dshin | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.