Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2023-06-01T01:30:24Z | - |
dc.date.available | 2023-06-01T01:30:24Z | - |
dc.date.issued | 2012-04 | - |
dc.identifier.citation | IEEE Journal of Quantum Electronics, v. 48, NO. 4, Page. 500-506 | - |
dc.identifier.issn | 0018-9197;1558-1713 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/6145600 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181898 | - |
dc.description.abstract | The internal electric field due to the piezoelectric effect in an InGaN/GaN multiple quantum-well structure is measured via photoluminescence (PL), electroreflectance (ER), and photocurrent (PC) spectroscopies, and the measurement results are compared with each other and with theoretically calculated values. The flat-band voltage is estimated by measuring the applied bias voltage that induces the maximum in PL peak energy by the quantum-confined Stark effect, 180 phase shift in the ER spectrum, and the smallest band tail state in the PC spectrum. The internal electric fields estimated by the PL, PC, and ER spectra are -1.81, -2.12 +/- 0.14, and -2.04 MV/cm, respectively. The measured piezoelectric fields are in good agreement with theoretically calculated values. Possible factors affecting piezoelectric field measurements are discussed from various perspectives. | - |
dc.description.sponsorship | the Industrial Strategic Technology Development Program funded by the Ministry Knowledge Economy 10032099. | - |
dc.language | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.subject | Electroreflectance | - |
dc.subject | GaN | - |
dc.subject | light-emitting diodes | - |
dc.subject | modulation spectroscopy | - |
dc.subject | photocurrent | - |
dc.subject | piezoelectric field | - |
dc.subject | polarization | - |
dc.subject | strain | - |
dc.title | Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes | - |
dc.type | Article | - |
dc.relation.no | 4 | - |
dc.relation.volume | 48 | - |
dc.identifier.doi | 10.1109/JQE.2012.2186610 | - |
dc.relation.page | 500-506 | - |
dc.relation.journal | IEEE Journal of Quantum Electronics | - |
dc.contributor.googleauthor | Park, Su-Ik | - |
dc.contributor.googleauthor | Lee, Jong-Ik | - |
dc.contributor.googleauthor | Jang, Dong-Hyun | - |
dc.contributor.googleauthor | Kim, Hyun-Sung | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Ryu, Han-Youl | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | dshin | - |
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