Journal of Materials Chemistry A, v. 2, NO. 9, Page. 2928-2933
Abstract
The long-term steady production of H-2 is vital for p-Si photocathodes. However, the oxidation of a Si photoelectrode substantially deteriorates its performance, over time. This study demonstrates that a thin Al2O3 layer deposited over the Si can prevent oxidation and also reduce overpotential, via a surface passivation effect.