Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells
- Title
- Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells
- Author
- 방진호
- Keywords
- QDSSCs; Atomic layer deposition; Zinc sulfide; Interfacial layer; Quantum dots loading
- Issue Date
- 2018-12
- Publisher
- Elsevier BV
- Citation
- Materials Chemistry and Physics, v. 220, Page. 293-298
- Abstract
- Ultrathin and conformal ZnS film grown by atomic layer deposition was employed in quantum dot-sensitized solar cells (QDSSCs) as an interfacial layer (IL) between mesoporous TiO2 photoanode and successive ionic layer adsorption and reaction (SILAR)-grown PbS QDs. ZnS IL provided more nucleation sites compared to a bare TiO2 photoanode, which enhanced PbS QDs loading remarkably. As a result, the optical absorbance and thus photocurrent density considerably increased. The power conversion efficiency of QDSSCs increased from 3.4% to 4% by introducing the ZnS IL. However, the beta-recombination model obtained from electrochemical impedance spectroscopy revealed the evolution of charge carrier recombination inside QDs as a consequence of enhanced QD loading, which partly dilutes this benefit.
- URI
- https://www.sciencedirect.com/science/article/pii/S0254058418307570?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/181727
- ISSN
- 0254-0584;1879-3312
- DOI
- 10.1016/j.matchemphys.2018.09.006
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > CHEMICAL AND MOLECULAR ENGINEERING(화학분자공학과) > Articles
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